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| BBY 52-02W Silicon Tuning Diode * High Q hyperband tuning diode * Low series inductance * Designed for low tuning voltage operation * For VCO's in mobile communications equipment 2 1 VES05991 Type BBY 52-02W Marking K Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 7 20 -55 ... 150 -55 ... 150 Unit V mA C 1 Sep-30-1999 BBY 52-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 6 V Reverse current VR = 6 V, TA = 150 C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance Ls 0.6 CC 0.09 rs 0.9 1.7 CT1 /CT4 CT 1.4 0.95 0.9 0.85 1.1 1.85 1.5 1.35 1.15 1.6 2.2 2 1.75 1.45 2.1 Unit max. 10 100 nA typ. - IR IR - pF pF nH 2 Sep-30-1999 BBY 52-02W Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR) TA = 25 C 45 pA 2.6 pF 2.2 2.0 35 30 CD IR 25 20 15 10 5 0 0.0 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 4.0 1.0 2.0 3.0 4.0 5.0 V 7.0 VR VR 3 Sep-30-1999 |
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